On wet etching of n-Si (100) coated with sparse ag-particles in aqueous NH 4F with the aid of H 2O 2

NCU Institutional Repository > 工學院 > 材料科學與工程研究所 > 期刊論文 > Item 987654321/103971

請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/103971

題名:	On wet etching of n-Si (100) coated with sparse ag-particles in aqueous NH 4F with the aid of H 2O 2
作者:	林景崎;Chuang, C.L.;Lin, J.C.;Chao, K.H.;Lin, C.C.;Lerondel, G.
貢獻者:	工學院材料科學與工程研究所
關鍵詞:	Ag-nanoparticles;Ammonium fluoride;Chemical Sciences;Engineering Sciences;Material chemistry;Micro and nanotechnologies;Microelectronics;nano-pores, n-type silicon;Sparse distribution
日期:	2012-06-28
上傳時間:	2026-04-23 11:40:58 (UTC+8)
出版者:	Electrochemical Science Group;Elsevier B.V
摘要:	摘要： Single crystalline n-Si (100) previously coated with sparse silver nano-particles were immersed in various solutions of ammonium fluoride to investigate their wet etching. In the absence of H2O2, the open circuit potential (OCP) of the silicon was more active in the solutions of 11.0 M than 1.0 M NH4F. In the present of H2O2, the OCP of the silicon increased with increasing the concentration of H2O2 (from 1.0 to 5.0 M). The etching morphology of the specimens, examined through scanning electron microscopy (SEM), revealed two different types. The first type of morphologies revealed a number of deep pores produced on the n-Si (100) post its immersion in 1.0 M NH4F + 5.0 M H2O2 for 1 h. These pores were 50-150nm in diameter and 200-300nm in depth. The second type of morphologies displayed few shallow pores on the Si (100) post its immersion in 11.0 M NH4F + 5.0 M H2O2 for 1 h. The study of electrochemical impedance spectroscopy (EIS) provided useful information to understand the kinetics of this system. The experimental EIS data simulated with commercial software (i.e., Z-view) were satisfactorily consistent with two distinct sets of proposed equivalent circuit (i.e., EQA and EQB) in response to those two different etching morphologies. Based on EQB, we construct a schematic model to illustrate the formation of deep pores on n-Si (100) in the system of 1.0 M NH4F + 5.0 M H2O2. The oxide capacitance (i.e., C1) present in EQB is absent in EQA and replaced with an inductance (i.e., L1). EQA could be used to delineate the kinetics of n-Si (100) in two single solutions of 1.0 and 11.0 M NH4F and that in 11.0 M NH4F + 5.0 M H2O2. In the absence of H2O2, the charge-transfer resistance (i.e., R2) in EQA is very high so that n-Si (100) is highly resistant to corrosion in both single 1.0 and 11.0 M NH4F. However, in the presence of H2O2, this charge transfer (i.e., R2) is hugely reduced in the system of 1.0 M NH4F + 5.0 M H2O2 and 11.0 M NH4F + 5.0 M H2O2. The contribution of hydrogen peroxide is not only to increase the open circuit potential but also to facilitate the creation of holes in the catalytic process assisted by the sparse nano Ag-particles on the n-Si (100) surface. The mechanism could be confirmed by the plots of phase angle against the exerted frequencies. 出版者： Elsevier B.V 出版日期： 2012-04-01 出處： International journal of electrochemical science, 2012-04, Vol.7 (4), p.2947-2964 資源來源： Alma/SFX Local Collection 版權： 2012 The Authors. Published by ESG 版權： licence_http://creativecommons.org/publicdomain/zero 識別號： ISSN: 1452-3981 識別號： EISSN: 1452-3981 識別號： DOI: 10.1016/S1452-3981(23)13927-7
顯示於類別:	[材料科學與工程研究所 ] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	33	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing

資料載入中.....