Photoluminescence analysis of CdS/CIGS interfaces in CIGS solar cells

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103973

Title:	Photoluminescence analysis of CdS/CIGS interfaces in CIGS solar cells
Authors:	郭倩丞;Chen, Sheng-Hui;Lin, Wei-Ting;Chan, Shih-Hao;Tseng, Shao-Ze;Kuo, Chien-Cheng;Hu, Sung-Cheng;Peng, Wan-Hsuan;Lu, Yung-Tien
Contributors:	理學院光電科學與工程學系
Date:	2015-01-01
Issue Date:	2026-04-23 11:41:00 (UTC+8)
Publisher:	Electrochemical Society, Inc.;The Electrochemical Society
Abstract:	摘要： In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150°C and 200°C, respectively. The results showed that the defect states (VSe and VCu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200°C for 30 min. 其他題名： ECS J. Solid State Sci. Technol 出版者： The Electrochemical Society 出版日期： 2015-01-01 出處： ECS journal of solid state science and technology, 2015-01, Vol.4 (9), p.P347-P350 版權： 2015 The Electrochemical Society 識別號： ISSN: 2162-8769 識別號： EISSN: 2162-8777 識別號： DOI: 10.1149/2.0041509jss
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	16	View/Open

社群 sharing