Electrochemical Society, Inc.;The Electrochemical Society
摘要:
摘要： In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150°C and 200°C, respectively. The results showed that the defect states (VSe and VCu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200°C for 30 min. 其他題名： ECS J. Solid State Sci. Technol 出版者： The Electrochemical Society 出版日期： 2015-01-01 出處： ECS journal of solid state science and technology, 2015-01, Vol.4 (9), p.P347-P350 版權： 2015 The Electrochemical Society 識別號： ISSN: 2162-8769 識別號： EISSN: 2162-8777 識別號： DOI: 10.1149/2.0041509jss
