摘要： Antireflective Si/oxide core-shell nanowire arrays (NWAs) were fabricated by galvanic etching and subsequent annealing process. The excellent light-harvesting characteristics of the core-shell NWAs, such as broadband working ranges, omnidirectionality, and polarization-insensitivity, ascribed to the smooth index transition from air to the substrates, have been demonstrated. By tuning core-shell volume ratios, we obtained enhanced light trapping regions implemented in either the planar Si underneath NWAs or the core regions of NWAs, greatly benefiting the geometry design of planar and radial p-n junction cell structures, respectively. This photon management scheme indicates the potential use in nanostructured photovoltaic applications. 其他題名： Opt Express 出版者： United States 出版日期： 2012-03-12 出處： Optics express, 2012-03, Vol.20 (S2), p.A255 資源來源： Optica Publishing Group Journals 識別號： ISSN: 1094-4087 識別號： EISSN: 1094-4087 識別號： DOI: 10.1364/OE.20.00A255 識別號： PMID: 22418674
