Preparation of low resistivity transparent conductive Nb-doped TiO 2 films by the co-sputtering method

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104047

Title:	Preparation of low resistivity transparent conductive Nb-doped TiO 2 films by the co-sputtering method
Authors:	郭倩丞;Li, Meng-Chi;Kuo, Chien-Cheng;Peng, Ssu-Hsiang;Chen, Sheng-Hui;Lee, Cheng-Chung
Contributors:	理學院光電科學與工程學系
Date:	2012-02-01
Issue Date:	2026-04-23 11:42:29 (UTC+8)
Publisher:	Japan Society of Applied Physics
Abstract:	摘要： Low resistivity Nb-doped TiO 2 transparent conducting oxide (TNO) thin films have been achieved by a pulsed dc magnetron co-sputtering at room temperature and the annealing treatment. Pulsed dc power provides the stabilization of reactive sputtering. The dc power of Nb target is controlled to find the optimum Nb content in TNO films. The carrier concentration is linearly proportional to Nb content in TNO films. The lowest resistivity was measured as 4.55×10 -4 Ω cm at 24 W dc power of Nb and the average absorbance in the visible light region was smaller than 8% for different dc powers. The results of contact angle revealed that TNO films still keep the surface hydrophilicity and have the characteristic of photo-catalyst. 出版日期： 2012-02-01 出處： Japanese Journal of Applied Physics, 2012-02, Vol.51 (2R), p.25504 資源來源： Institute of Physics Journals 識別號： ISSN: 0021-4922 識別號： EISSN: 1347-4065 識別號： DOI: 10.1143/JJAP.51.025504
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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