Promotion of solid-state lighting for ZnCdSe quantum dot modified-YAG-based white light-emitting diodes

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题名:	Promotion of solid-state lighting for ZnCdSe quantum dot modified-YAG-based white light-emitting diodes
作者:	王冠文;Chung, Shu-Ru;Chen, Sheng-Shiun;Wang, Kuan-Wen;Siao, Cyuan-Bin
贡献者:	工學院材料科學與工程研究所
关键词:	cold;color;light emitting diodes;lighting;nitrides;photoluminescence;quantum dots;surfactants;temperature
日期:	2016-01-01
上传时间:	2026-04-23 11:42:53 (UTC+8)
出版者:	Royal Society of Chemistry
摘要:	摘要： In this study, the effect of quantum dot (QD) addition and photoluminescence quantum yield (PL QY) of QDs on the luminous efficacy and color rendering index (CRI) of white light-emitting diodes (LEDs) has been investigated. Two kinds of red-emitting materials, ZnCdSe QDs and commercial CaSiAlN 3 :Eu 2+ (nitride) phosphor, are mixed with commercial Y 3 Al 5 O 12 :Ce 3+ (YAG) phosphor as white LED materials. The as-prepared ZnCdSe QDs have a PL QY of about 44%, which drops to 29% after purification due to the removal of the surfactants. When the as-prepared QDs are used, both the CRI and luminous efficacy of the YAG/QDs-based white LED can be improved to meet the requirements of solid-state lighting (SSL), suggesting that the addition of QDs with high QY can overcome the trade-off property between CRI and luminous efficacy. Besides, the correlated color temperature (CCT) of this white LED can be tuned toward cold light by incorporating YAG with QDs, while it tunes toward warm light for a YAG/CaSiAlN 3 -based white LED. This special phenomenon can be solely observed in QD-modified white LEDs. Moreover, the long term operation stability of QD-modified white LEDs is excellent. In this study, the effect of quantum dot (QD) addition and photoluminescence quantum yield (PL QY) of QDs on the luminous efficacy and color rendering index (CRI) of white light-emitting diodes (LEDs) has been investigated. 出版日期： 2016-01-01 出處： RSC advances, 2016-01, Vol.6 (57), p.51989-51996 資源來源： Royal Society of Chemistry 識別號： ISSN: 2046-2069 識別號： EISSN: 2046-2069 識別號： DOI: 10.1039/c6ra10673k
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