Red phosphorescent trilayer organic light-emitting field-effect transistors with a wide recombination zone

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104101

Title:	Red phosphorescent trilayer organic light-emitting field-effect transistors with a wide recombination zone
Authors:	張瑞芬;Chang, Jui-Fen;Chen, Wei-Ren;Lai, Yi-Chien;Chien, Fan-Ching
Contributors:	理學院光電科學與工程學系
Keywords:	Charge distribution;Devices;Electroluminescence;Emission;Field effect transistors;Phosphorescence;Semiconductor devices;Transport
Date:	2016-02-01
Issue Date:	2026-04-23 11:43:35 (UTC+8)
Publisher:	Japan Society of Applied Physics;The Japan Society of Applied Physics
Abstract:	摘要： We report on red phosphorescent trilayer organic light-emitting field-effect transistors (LEFETs), which exhibit ambipolar transport characteristics but strong emission in the unipolar hole regime, with an exceptionally wide recombination zone of 60-70 µm and a maximum external quantum efficiency of 0.21%. From the results of detailed electroluminescence characterization, we clarify how the energy-level matching condition and transport geometry of the heterostructure govern the charge distribution and recombination, and affect the overall device performance. 其他題名： Jpn. J. Appl. Phys 出版者： The Japan Society of Applied Physics 出版日期： 2016-02-01 出處： Japanese Journal of Applied Physics, 2016-02, Vol.55 (2), p.20304 資源來源： Institute of Physics Journals 版權： 2016 The Japan Society of Applied Physics 識別號： ISSN: 0021-4922 識別號： EISSN: 1347-4065 識別號： DOI: 10.7567/JJAP.55.020304 識別號： CODEN: JJAPB6
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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