Carbon re-incorporation in phosphorus-doped Si1- yCy epitaxial layers during thermal annealing

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104146

Title:	Carbon re-incorporation in phosphorus-doped Si1- yCy epitaxial layers during thermal annealing
Authors:	溫偉源;Chang, Hung-Tai;Lin, I.-Ping;Twan, Sheng-Chen;Woon, Wei-Yen;Lee, Sheng-Wei
Contributors:	理學院物理學系
Keywords:	Alloys;Annealing;Budgeting;Carbon;Chemical vapor deposition;Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.);Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Defects and impurities: doping, implantation, distribution, concentration, etc;Epitaxy;Exact sciences and technology;Materials science;Methods of deposition of films and coatings;film growth and epitaxy;Phosphorus;Physics;Precipitation;Strain;Strain relaxation;Surfaces and interfaces;thin films and whiskers (structure and nonelectronic properties);Thermal stability;Thin film structure and morphology;Transmission electron microscopy
Date:	2013-03-15
Issue Date:	2026-04-23 11:44:27 (UTC+8)
Publisher:	Elsevier BV;Kidlington: Elsevier B.V
Abstract:	摘要： ► An abnormal strain enhancement was observed in the initial stage of annealing. ► Almost complete strain relaxation was found below β-SiC precipitation threshold. ► The strain transition can be explained by Ci re-incorporation and P deactivation. ► Si1−yCy could reach a maximal strain value if thermal budget is well controlled. The carbon-incorporation behavior in phosphorous-doped Si1−yCy/Si (y1∼0.018, y2∼0.024) epilayers grown by reduced pressure chemical vapor deposition (RPCVD) has been investigated as a function of annealing temperatures. An abnormal interstitial carbon (Ci) re-incorporation was observed in the initial stage of thermal annealing, introducing an additional tensile strain into the Si1−yCy epilayers. At higher temperature but below β-SiC precipitation threshold, almost complete strain relaxation was found. These strain transitions can be attributed to the competitive behavior between Ci re-incorporation and phosphorus deactivation to kick out the substitutional carbon (Csub) atoms during the post-annealing process. This work demonstrated that Si1−yCy epilayers grown by RPCVD could keep both enhanced carbon incorporation and nonequilibrium phosphorus activation if the thermal budget is well controlled. 出版者： Kidlington: Elsevier B.V 出版日期： 2013-03-15 出處： Journal of alloys and compounds, 2013-03, Vol.553, p.30-34 版權： 2012 Elsevier B.V. 版權： 2014 INIST-CNRS 識別號： ISSN: 0925-8388 識別號： EISSN: 1873-4669 識別號： DOI: 10.1016/j.jallcom.2012.10.158
Appears in Collections:	[Department of Physics] journal & Dissertation

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