Structural, optical, photoelectrochemical characteristics of p-type Sb-doped AgInS2 thin films prepared by chemical bath deposition process

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Title:	Structural, optical, photoelectrochemical characteristics of p-type Sb-doped AgInS2 thin films prepared by chemical bath deposition process
Authors:	林景崎;Huang, Mao-Chia;Wang, Tsinghai;Wu, Ching-Chen;Chang, Wen-Sheng;Lin, Jing-Chie;Lan, Wei-Hsuan;Yen, Tzu-Hsiang
Contributors:	工學院材料科學與工程研究所
Keywords:	Antimony;Density;Deposition;Electrodes;Oxides;Photocurrent;Photoelectric effect;Thin films
Date:	2014-01-01
Issue Date:	2026-04-23 11:45:29 (UTC+8)
Publisher:	American Scientific Publishers
Abstract:	摘要： In this study, p-type Sb-doped AgInS sub(2) thin films were prepared on indium-tin oxide (ITO) glass substrates via chemical bath deposition (CBD) process. Various Sb-doped AgInS sub(2) thin films, with varying Sb concentration (0.2, 0.4, 0.6, and 0.8 mM) were prepared. We found the 0.6 mM Sb-doped AgInS sub(2) film had the highest photoelectrochemical performance with photocurrent density of -1.22 mA/cm super(2) bias -1.5 V versus SCE reference electrode under a 300 W Xe lamp illumination with the intensity of 100 mW/cm super(2). This value was about 4 times higher than the 0.2 mM Sb-doped AgInS sub(2) film. Enhanced photocurrent density was likely the result of the higher charge carrier density introduced by Sb dopant. 出版日期： 2014-06-01 出處： Nanoscience and nanotechnology letters, 2014-06, Vol.6 (6), p.464-469 識別號： ISSN: 1941-4900 識別號： DOI: 10.1166/nnl.2014.1786
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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