Structure and characterization of Sn, Al co-doped zinc oxide thin films prepared by sol-gel dip-coating process

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Title:	Structure and characterization of Sn, Al co-doped zinc oxide thin films prepared by sol-gel dip-coating process
Authors:	林景崎;Lee, Min-I;Huang, Mao-Chia;Legrand, David;Lerondel, Gilles;Lin, Jing-Chie
Contributors:	工學院材料科學與工程研究所
Keywords:	Aluminum;Annealing;Chemical Sciences;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Cross-disciplinary physics: materials science;rheology;Density;Dip coatings;Electrical properties of specific thin films;Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures;Electronic transport phenomena in thin films and low-dimensional structures;Ethyl alcohol;Exact sciences and technology;Liquid phase epitaxy;deposition from liquid phases (melts, solutions, and surface layers on liquids);Material chemistry;Materials science;Methods of deposition of films and coatings;film growth and epitaxy;Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation;Optical properties of specific thin films;Photoconduction and photovoltaic effects;photodielectric effects;Photoelectric effect;Photoelectrochemistry;Physics;Sol-gel processes;TAZO;Thin films;Tin;Water splitting;Zinc oxide;ZnO
Date:	2014-01-01
Issue Date:	2026-04-23 11:45:34 (UTC+8)
Publisher:	Elsevier;Amsterdam: Elsevier B.V
Abstract:	摘要： Transparent conductive zinc oxide co-doped with tin and aluminum (TAZO) thin films were prepared via sol–gel dip-coating process. Non-toxic ethanol was used in this study instead of 2-methoxyethanol used in conventional work. Dip-coating was repeated several times to obtain relatively thick films consisting of six layers. The films were then annealed at 500°C for 1h in air or in vacuum and not subsequently as employed in other studies. The X-ray diffraction patterns indicated that all the samples revealed a single phase of hexagonal ZnO polycrystalline structure with a main peak of (002). The optical band gap and resistivity of the TAZO films were in the ranges of 3.28 to 3.32eV and 0.52 to 575.25Ωcm, respectively. The 1.0at.% Sn, 1.0at.% Al co-doped ZnO thin film annealed in vacuum was found to have a better photoelectrochemical performance with photocurrent density of about 0.28mA/cm2 at a bias of 0.5V vs. SCE under a 300W Xe lamp illumination with the intensity of 100mW/cm2. Compared to the same dopant concentration but annealed in air (~0.05mA/cm2 bias 0.5V vs. SCE), the photocurrent density of the film annealed in vacuum was 5 times higher than the film annealed in air. Through electrochemical measurements, we found that the dopant concentration of Sn plays an important role in TAZO that affected photocurrent density, stability of water splitting and anti-corrosion. •Al, Sn co-doped ZnO (TAZO) films was synthesized by sol–gel process.•The parameters of TAZO films were dopant concentration and annealed ambient.•The photoelectrochemical characteristics of TAZO films were investigated. 出版者： Amsterdam: Elsevier B.V 出版日期： 2014-11-03 出處： Thin solid films, 2014-11, Vol.570, p.516-526 版權： 2014 Elsevier B.V. 版權： 2015 INIST-CNRS 版權： licence_http://creativecommons.org/publicdomain/zero 識別號： ISSN: 0040-6090 識別號： EISSN: 1879-2731 識別號： DOI: 10.1016/j.tsf.2014.04.051 識別號： CODEN: THSFAP
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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