American Institute of Physics;Melville: AIP Publishing
摘要:
摘要： Internal photoemission (IPE) across an n-type Schottky junction due to standard AM1.5G solar illumination is quantified with practical considerations for Cu, Ag, and Al under direct and fully nondirect transitions, all in the context of the constant matrix element approximation. Under direct transitions, photoemitted electrons from d bands dominate the photocurrent and exhibit a strong dependence on the barrier energy ΦB but are less sensitive to the change in the metal thickness. Photocurrent is shown to be nearly completely contributed by s-state electrons in the fully nondirect approximation that offers nearly identical results as in the direct transition for metals having a free-electron-like band structure. Compared with noble metals, Al-based IPE has the highest quantum yield up to about 5.4% at ΦB = 0.5 eV and a maximum power conversion efficiency of approximately 0.31% due mainly to its relatively uniform and wide Pexc energy spectral width. Metals (e.g., Ag) with a larger interband absorption edge are shown to outperform those with shallower d-bands (e.g., Cu and Au). 出版者： Melville: AIP Publishing 出版日期： 2016-05-14 出處： Journal of Applied Physics, 2016-05, Vol.119 (18) 資源來源： AIP Journals (American Institute of Physics) 版權： Author(s) 版權： 2016 Author(s). Published by AIP Publishing. 識別號： ISSN: 0021-8979 識別號： EISSN: 1089-7550 識別號： DOI: 10.1063/1.4948386 識別號： CODEN: JAPIAU
