Structure and characterization of the sputtered ZnO, Al-doped ZnO, Ti-doped ZnO and Ti, Al-co-doped ZnO thin films

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題名:	Structure and characterization of the sputtered ZnO, Al-doped ZnO, Ti-doped ZnO and Ti, Al-co-doped ZnO thin films
作者:	林景崎;Lin, Jing-Chie;Huang, Mao-Chia;Wang, Tsinghai;Wu, Jian-Nan;Tseng, Yao-Tien;Peng, Kun-Cheng
貢獻者:	工學院材料科學與工程研究所
關鍵詞:	AL-CO-DOPED ZNO;Azo;Electrial Properties;Magnetron Sputtering Process;Tazo
日期:	2015-01-01
上傳時間:	2026-04-23 11:45:38 (UTC+8)
出版者:	American Scientific Publishers
摘要:	摘要： Transparent conductive thin films such as ZnO, Al-doped ZnO (AZO), Ti-doped ZnO (TZO), and Ti, Al-codoped ZnO (TAZO) were prepared on the STN glass substrate by radio frequency sputtering. The thickness of as-prepared films was approximately 700 nm and the concentration of dopants was controlled by adjusting the electrical power of sputtering. Results from X-ray diffraction patterns clearly showed that all samples were in wurtzite structure with (002) preferential orientation. They all possessed smooth surfaces with the mixture of column and core texture as indicated by the field emission scanning electronic microscope analyses. The average transmittance ranging from 400 to 800 nm wavelength, determined by means of UV-visible spectra, TAZO (93%) was higher than AZO (90%), TZO (91%), and ZnO (86%). Electrical resistivity determined by four-point probe followed the order of TAZO (0.91 m cm) < AZO (3.61 m cm) - TZO (3.84 m cm) ZnO (289 m cm). Observed lower resistivity of TAZO was likely attributed to the high density of crystal defects i. e., stacking faults as indicated by the high resolution transmission electron microscopy analyses. 其他題名： Mat Express 出版者： American Scientific Publishers 出版日期： 2015-03-01 出處： Materials express, 2015-03, Vol.5 (2), p.153-158 識別號： ISSN: 2158-5849 識別號： DOI: 10.1166/mex.2015.1218
顯示於類別:	[材料科學與工程研究所 ] 期刊論文

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