摘 要 在本篇論文中，我們使用Poisson’s equation 以及 electron continuity equation 和hole continuity equation設計出包含一維及二維的等效電路模型。藉由此等效電路模型所建構的模擬器，可幫助我們探討元件內部載子復合(recombination)的情形，並將其應用在各式元件內部功率分佈(power distribution)的討論，以及探究隨著功率消耗(power dissipation)而來的熱效應。我們以各式半導體元件為論文的核心，首先是一維及二維的二極體(diode)，探討基本位勢曲線及其功率分佈狀況， 並討論在不同摻雜情況下其功率分佈的差異。功率分佈對於半導體元件分析及設 計上，扮演著相當重要的角色。因此，在與二維二極體相同的基礎上，我們也探 討了BJT(Bipolar Junction Transistor )，觀察其在不同偏壓大小及調整摻雜的情況 下功率分佈的差異。最後，由於載子復合產生的功率會發生消耗的情況，使得元 件內部溫度提高，我們利用二維等效電路模型模擬出以功率作為熱源，觀察元件內部發燙生熱的情況，探討各式不同元件在導通時溫度的分佈情況，可作為元件可靠度的參考。 Abstract In this paper, we use Poisson’s equation and continuity equations to design the 1-D and 2-D device simulators. The device simulator can help us to simulate the carrier recombination of the device and discuss power distribution in the device. It also can be used to study heat effect by power dissipation. First, we study potential and power distribution. We also discuss the power distribution in a pn diode with different doping. Power distribution plays an important role in device design. Therefore, based on 2-D PN junction , we observe BJT’s power distribution in different bias and doping. Finally, because power dissipation increase the temperature in device, we use 2-D temperature simulator to simulate temperature distribution in 2-D devices. This simulator can be a useful tool for 2-D device analysis.
