Spectral Monitoring CH/C2 Ratio of Methane Plasma for Growing Single-Layer Graphene on Cu

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104228

Title:	Spectral Monitoring CH/C2 Ratio of Methane Plasma for Growing Single-Layer Graphene on Cu
Authors:	郭倩丞;Chan, Shih-Hao;Liao, Shih-Fang;Chen, Hung-Pin;Wei, Hung-Sen;Chen, Sheng-Hui;Lee, Cheng-Chung;Kuo, Chien-Cheng
Contributors:	理學院光電科學與工程學系
Date:	2015-01-01
Issue Date:	2026-04-23 11:45:56 (UTC+8)
Publisher:	Hindawi Publishing Corporation
Abstract:	摘要： Single‐layer graphene was grown on copper at a low temperature of 600°C by plasma‐assisted thermal chemical vapor deposition. Its growth mechanism was discussed with reference to the emission spectra of the plasma. The methane plasma produces the active species (H x , CH x , and C x ) without the addition of flowing hydrogen, and the amounts of hydrogen‐containing species can be controlled by varying the plasma power. The effective distance was found between the plasma initial stage and the deposition stage for the single‐layer graphene synthesis. The results reveal that high‐quality graphene can be synthesized using methane plasma at a suitable plasma power. 出版日期： 2015-01 出處： Journal of nanomaterials, 2015-01, Vol.2015 (1) 資源來源：華藝CEPS中文電子期刊服務識別號： ISSN: 1687-4110 識別號： EISSN: 1687-4129 識別號： DOI: 10.1155/2015/423237
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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