本論文主要討論運用於微波以及毫米波之混頻器設計，使用金氧半場效電晶體中多層金屬的優點製作面積小且經濟價值高之寬頻混頻器。由於寬頻混頻器在設計上無法同時兼顧轉換損耗以及一分貝增益壓縮值，所以提出藉由分析電晶體閘極不同長度對於兩項特性參數有合影響，首先利用矽化鍺異質接面金氧半場效電晶體0.35 μm製程設計一寬頻無平衡器之混頻器，藉此驗證環狀電阻性架構運用於混頻器之可能性。 進一步結合特性良好且面積小之馬迅平衡器(Marchand Balun) 於18至52 GHz 之雙平衡式混頻器設計上。晶片面積為0.6 × 0.4 mm2。量測轉換損耗為 11.5 dB，中頻頻寬為DC-14 GHz。功率P1dB增益壓縮值為3 dBm，本地振盪到射頻端訊號隔絕度大於40 dB。 第四章則利用功率分配器，90度耦合器以及18-52 GHz之混頻器，組成一正交混頻器，此正交混頻器對於通訊系統有更大之應用。晶片面積為0.8 × 0.5 mm2。正交混頻器量測結果，轉換損耗為12.5 dB，功率P1dB增益壓縮值為1 dBm，本地振盪端到射頻訊號隔絕度為35 dB，鏡像抑制量最好值為-33 dBc。 在論文第五章則利用雙極場效應管(BiFET)製程製作運用於0.8-20 GHz之主動式吉爾伯混頻器[36]，雙極場效應管結合異質接面雙極性電晶體(HBTs)以及假晶格高電子遷移率場效電晶體(PHEMTs)兩種不同之電晶體，採用異質接面雙極性電晶體當做轉導級電晶體，假晶格高電子遷移率場效電晶體當作切換級電晶體，藉此來提高混頻器之特性。此設計亦可當作節調器使用，速度可達2 Gbps以上 Several resistive ring-type broadband mixers have been designed and fabricated by using CMOS techniques for microwave and MMW applications in this thesis. Since the broadband operation and the output power requirement are a tradeoff between the conversion loss and output 1 dB compression point, and the total gate area of NMOS transistor further investigated with the conversion loss. A broadband mixer without on-chip balun has been fabricated using 0.35 ?m SiGe BiCMOS process to verify the resistive ring-type mixer. The doubly balanced mixer with a compact Marchand balun has been presented in CMOS 0.18 ?m technique with a chip size of 0.6 ×0.4 mm2. The mixer exhibits an operation frequency of from 18 to 52 GHz, a measured conversion loss of 11.5 dB, an IF Frequency bandwidth of from DC to 14 GHz, an input P1dB of 3 dBm, and an LO-RF isolation of 40 dB. In chapter 4, an IQ mixer achieved using the doubly balanced mixer, a power dividers, and a 90。 hybrid couplers is also presented with a chip size of 0.8 ×0.5 mm2 for high-speed orthogonal modulation applications. The IQ mixer demonstrated a measured conversion loss of 12.5 dB, an IF Frequency bandwidth of DC-14 GHz, an input P1dB of 3 dBm, a LO-RF, isolation of 35 dB, and a side-band suppression of -33 dBc. In chapter 5, an active Gilbert-cell mixer has been presented in BiFET process with the operating frequency of 0.8-20 GHz. BiFET process was compined with HBTs and PHEMTs. For the high performance mixer, HBT devices was designed for trans-conductance stage, PHEMT devices was designed for switch-stage. By the way, the design could been using in a modulator. The data rate is more than 2 Gbps.
