The structure and photoelectrochemistry of Al, Ti Co-doped zinc oxide thin films prepared by sol-gel dip-coating process

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Title:	The structure and photoelectrochemistry of Al, Ti Co-doped zinc oxide thin films prepared by sol-gel dip-coating process
Authors:	林景崎;Huang, Mao-Chia;Wang, Tsing-Hai;Cheng, Shuo-Han;Lin, Jing-Chie;Lan, Wei-Hsuan;Wu, Ching-Chen;Chang, Wen-Sheng
Contributors:	工學院材料科學與工程研究所
Keywords:	Aluminum;Atzo;Density;Dip coatings;Ethyl alcohol;Photoelectrochemistry;Sol gel process;Thin films;Titanium;Water Splitting;Zinc oxide;ZNO
Date:	2014-03-01
Issue Date:	2026-04-23 11:48:09 (UTC+8)
Publisher:	American Scientific Publishers
Abstract:	摘要： Al, Ti co-doped ZnO (ATZO) thin films were prepared on glass substrate via sol-gel dip-coating process. Importantly, we replaced the toxic 2-methoxy-ethanol by nontoxic ethanol as a much safer reagent. The dip-coating was repeated four times and as-obtained thin films were then annealed at 500 °C for 1 h in air. We found that introducing Al and Ti dopant would transfer the principal diffraction peak from (101) to (002), decrease the vibration strength of E2 high and E1 LO, lead a relative smoother surface, blueshift the band gap, decrease resistance and increase photocurrent density. Also, doping Al and Ti arose the open circuit potential and as a result, increased the anti-correction of ATZO films. 其他題名： Nanosci Nanotechnol Lett 出版者： American Scientific Publishers 出版日期： 2014-03-01 出處： Nanoscience and nanotechnology letters, 2014-03, Vol.6 (3), p.210-215 識別號： ISSN: 1941-4900 識別號： EISSN: 1941-4919 識別號： DOI: 10.1166/nnl.2014.1754
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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