The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors

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题名:	The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors
作者:	郭倩丞;Chen, Sheng-Hui;Wei, Hung-Sen;Li, Meng-Chi;Chan, Shih-Hao;Kuo, Chien-Cheng
贡献者:	理學院光電科學與工程學系
关键词:	Annealing;Electrical resistivity;Indium tin oxide;Magnetron sputtering;Microelectronics;Nanomaterials;Nanostructure;Opacity;Sensors;Solar energy;Thin films;Touch
日期:	2015-01-01
上传时间:	2026-04-23 11:48:12 (UTC+8)
出版者:	Hindawi Publishing Corporation;Cairo, Egypt: Hindawi Limiteds
摘要:	摘要： This study aims to discuss the sheet resistance of ultrathin indium tin oxide (ITO) transparent conductive films during the postannealing treatment. The thickness of the ultrathin ITO films is 20 nm. They are prepared on B270 glass substrates at room temperature by a direct-current pulsed magnetron sputtering system. Ultrathin ITO films with high sheet resistance are commonly used for touch panel applications. As the annealing temperature is increased, the structure of the ultrathin ITO film changes from amorphous to polycrystalline. The crystalline of ultrathin ITO films becomes stronger with an increase of annealing temperature, which further leads to the effect of enhanced Hall mobility. A postannealing treatment in an atmosphere can enhance the optical transmittance owing to the filling of oxygen vacancies, but the sheet resistance rises sharply. However, a higher annealing temperature, above 250°C, results in a decrease in the sheet resistance of ultrathin ITO films, because more Sn ions become an effective dopant. An optimum sheet resistance of 336 Ω/sqr was obtained for ultrathin ITO films at 400°C with an average optical transmittance of 86.8% for touch sensor applications. 出版者： Cairo, Egypt: Hindawi Limiteds 出版日期： 2015-01-01 出處： Journal of Nanomaterials, 2015-01, Vol.2015 (2015), p.815-819-86 資源來源：華藝CEPS中文電子期刊服務版權： Copyright © 2015 Shih-Hao Chan et al. 版權： Copyright © 2015 Shih-Hao Chan et al. Shih-Hao Chan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 識別號： ISSN: 1687-4110 識別號： ISSN: 1687-4129 識別號： EISSN: 1687-4129 識別號： DOI: 10.1155/2015/179804
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