Ultrasensitive Thin-Film-Based AlxGa1-xN Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104392

Title:	Ultrasensitive Thin-Film-Based AlxGa1-xN Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential
Authors:	賴昆佑;Wang, Chao-Hung;Lai, Kun-Yu;Li, Yi-Chang;Chen, Yen-Chih;Liu, Chuan-Pu
Contributors:	理學院光電科學與工程學系
Keywords:	alloying;changes of Schottky barrier height;piezotronic strain sensors;strain sensitivity
Date:	2015-10-01
Issue Date:	2026-04-23 11:49:21 (UTC+8)
Publisher:	Wiley-Blackwell;Blackwell Publishing Ltd
Abstract:	摘要： AlxGa1−xN thin‐film‐based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound AlxGa1−xN is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect. 其他題名： Adv. Mater 出版者： Blackwell Publishing Ltd 出版日期： 2015-10-28 出處： Advanced materials (Weinheim), 2015-10, Vol.27 (40), p.6289-6295 資源來源： Wiley Online Library - AutoHoldings Journals 版權： 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 0935-9648 識別號： EISSN: 1521-4095 識別號： DOI: 10.1002/adma.201502314
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	22	View/Open

社群 sharing