Uniformly distributed graphene domain grows on standing copper via low-pressure chemical vapor deposition

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題名:	Uniformly distributed graphene domain grows on standing copper via low-pressure chemical vapor deposition
作者:	陳昇暉;Chan, Shih-Hao;Chen, Sheng-Hui;Lin, Wei-Ting;Kuo, Chien-Cheng
貢獻者:	理學院光電科學與工程學系
關鍵詞:	Carbon;CHEMICAL VAPOR DEPOSITION;Copper;DEPOSITION;ELECTRICAL CONDUCTIVITY;Electrical resistivity;Electrodes;FOIL;Foils;Gas flow;Graphene;HIGH VACUUM;Light emitting diodes;MICA;Polyethylene terephthalates;Polymethyl methacrylate;Scanning electron microscopy;Solar energy;Thin films;VAPOR DEPOSITION;Zinc oxides
日期:	2013-10-07
上傳時間:	2026-04-23 11:49:44 (UTC+8)
出版者:	Hindawi Publishing Corporation;Cairo, Egypt: Hindawi Puplishing Corporation
摘要:	摘要： Uniformly distributed graphene domains were synthesized on standing copper foil by a low-pressure chemical vapor deposition system. This method improved the distribution of the graphene domains at different positions on the same piece of copper foil along the forward direction of the gas flow. Scanning electron microscopy (SEM) showed the average size of the graphene domains to be about ~20 μm. This results show that the sheet resistance of monolayer graphene on a polyethylene terephthalate (PET) substrate is about ~359 Ω/□ whereas that of the four-layer graphene films is about ~178 Ω/□, with a transmittance value of 88.86% at the 550 nm wavelength. Furthermore, the sheet resistance can be reduced with the addition of HNO3 resulting in a value of 84 Ω/□. These values meet the absolute standard for touch sensor applications, so we believe that this method can be a candidate for some transparent conductive electrode applications. 出版者： Cairo, Egypt: Hindawi Puplishing Corporation 出版日期： 2013-01-01 出處： Advances in materials science and engineering, 2013-01, Vol.2013 (2013), p.1-5 資源來源： Publicly available content database 版權： Copyright © 2013 Shih-Hao Chan et al. 版權： Copyright © 2013 Shih-Hao Chan et al. Shih-Hao Chan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 識別號： ISSN: 1687-8434 識別號： ISSN: 1687-8442 識別號： EISSN: 1687-8442 識別號： DOI: 10.1155/2013/460732
顯示於類別:	[光電科學與工程學系] 期刊論文

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