Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104467

Title:	Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells
Authors:	賴昆佑;Liao, Jen-Hsiung;Huang, Hsiao-Wei;Cheng, Lung-Chieh;Liu, Hsueh-Hsing;Chyi, Jen-Inn;Cai, Dong-Po;Chen, Chii-Chang;Lai, Kun-Yu
Contributors:	理學院光電科學與工程學系
Keywords:	Gallium nitrides;GaN;Homojunctions;Illumination;Intermediate band solar cells;Lasers;Photon absorption;Photovoltaic cells;Silicon;Solar cells;Solar energy;Yellow luminescence
Date:	2015-01-01
Issue Date:	2026-04-23 11:50:47 (UTC+8)
Publisher:	Elsevier BV;Elsevier B.V
Abstract:	摘要： The photovoltaic performance of a GaN p-n-n homojunction is characterized using the air-mass (AM) 1.5G solar spectrum and a 532-nm green laser. The n-type active region is doped with Si in order to create an intermediate band for sub-bandgap photon absorption. When the doping level in the active region increases from 0 (unintentionally doped) to n=1×1018cm−3, the short-circuit current density (Jsc) under illumination by the green laser is noticeably reduced, whereas the Jsc under AM1.5G is significantly enhanced by 90%. The results indicate that the Si-induced intermediate band is partially filled, a key feature favored by intermediate band solar cells. •GaN p-n-n homojunction solar cells are designed and fabricated to demonstrate the capability of sub-bandgap photon absorption.•The n-type active region is doped with Si in order to create an intermediate band.•Under the illumination of AM 1.5G, the short-circuit current density is significantly enhanced by 90% with increased Si-doping in the active region.•The partially filled intermediate band is confirmed with a two-photon absorption measurement. 出版者： Elsevier B.V 出版日期： 2015-01 出處： Solar energy materials and solar cells, 2015-01, Vol.132, p.544-548 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2014 Elsevier B.V. 識別號： ISSN: 0927-0248 識別號： EISSN: 1879-3398 識別號： DOI: 10.1016/j.solmat.2014.10.008
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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