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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104566


    Title: Electronic Structure and Infrared Light Emission in Dislocation-Engineered Silicon
    Authors: 鄭劭家;Hsin, Cheng-Lun;Teng, Hsu-Shen;Lin, Hsiang-Yuan;Cheng, Tzu-Hsuan;Cheng, Chao-Chia;Liu, Po-Liang
    Contributors: 理學院物理學系
    Keywords: Arrays;dislocation array;Educational institutions;first-principles calculations;Integrated circuits;network;Photonic band gap;Silicon;Slabs;Tunneling
    Date: 2015-05-01
    Issue Date: 2026-04-23 11:52:46 (UTC+8)
    Publisher: Institute of Electrical and Electronics Engineers Inc.;IEEE
    Abstract: 摘要: One of the perspectives of the Si-based technology is the optical interconnect for data transmission and applications in optoelectronic integrated circuit. In this report, the engineered dislocation network was proposed, and the atomic structure of the dislocation array was revealed by high-resolution transmission electron microscope and scanning tunneling microscope. The photoluminescence emission is strong and compatible with intrinsic Si characteristic peak, making it possible as light emitters in silicon. The analysis of dislocation array-induced scanning tunneling spectroscopy identified the presence of defect levels under the conduction band, compared with the occupied and unoccupied Kohn-Sham orbitals in the forbidden gap of Si derived from first-principles theoretical models. This study demonstrated the possibility of dislocation-induced optical transition from a theoretical and experimental perspective, which will be essential in the development of Si-based optoelectronic integrated circuit.
    其他題名: TNANO
    出版者: IEEE
    出版日期: 2015-05-01
    出處: IEEE transactions on nanotechnology, 2015-05, Vol.14 (3), p.399-403
    資源來源: IEEE Electronic Library (IEL)
    識別號: ISSN: 1536-125X
    識別號: EISSN: 1941-0085
    識別號: DOI: 10.1109/TNANO.2015.2411292
    識別號: CODEN: ITNECU
    Appears in Collections:[Department of Physics] journal & Dissertation

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