Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104598

Title:	Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method
Authors:	賴山強;Yoon, T. L.;Lim, T. L.;Min, T. K.;Hung, S. H.;Jakse, N.;Lai, S. K.
Contributors:	理學院物理學系
Keywords:	Chemical Sciences;Epitaxial growth;Graphene;Material chemistry;Silicon carbide;Silicon substrates;Simulated annealing
Date:	2013-11-28
Issue Date:	2026-04-23 11:53:23 (UTC+8)
Publisher:	American Institute of Physics;United States: AIP Publishing
Abstract:	摘要： We grew graphene epitaxially on 6H-SiC(0001) substrate by the simulated annealing method. The mechanisms that govern the growth process were investigated by testing two empirical potentials, namely, the widely used Tersoff potential [J. Tersoff, Phys. Rev. B 39, 5566 (1989)] and its more refined version published years later by Erhart and Albe [Phys. Rev. B 71, 035211 (2005)]. Upon contrasting the results obtained by these two potentials, we found that the potential proposed by Erhart and Albe is generally more physical and realistic, since the annealing temperature at which the graphene structure just coming into view at approximately 1200 K is unambiguously predicted and close to the experimentally observed pit formation at 1298 K within which the graphene nucleates. We evaluated the reasonableness of our layers of graphene by calculating carbon-carbon (i) average bond-length, (ii) binding energy, and (iii) pair correlation function. Also, we compared with related experiments the various distance of separation parameters between the overlaid layers of graphene and substrate surface. 其他題名： J Chem Phys 出版者： United States: AIP Publishing 出版日期： 2013-11-28 出處： The Journal of Chemical Physics, 2013-11, Vol.139 (20), p.204702 資源來源： AIP Journals (American Institute of Physics) 版權： Copyright American Institute of Physics Nov 28, 2013 版權： licence_http://creativecommons.org/publicdomain/zero 識別號： ISSN: 0021-9606 識別號： ISSN: 1089-7690 識別號： EISSN: 1089-7690 識別號： DOI: 10.1063/1.4832043 識別號： PMID: 24289364
Appears in Collections:	[Department of Physics] journal & Dissertation

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