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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104685


    Title: Fabrication of nanoscale alumina on NiAl(1 0 0) with a scanning tunneling microscope
    Authors: 羅夢凡;Lin, C.W.;Wang, C.T.;Luo, M.F.
    Contributors: 理學院物理學系
    Keywords: Alumina;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Exact sciences and technology;Localized heating;NiAl;Oxidation;Physics;Scanning tunneling microscope;Ultrahigh vacuum
    Date: 2013-01-01
    Issue Date: 2026-04-23 11:55:32 (UTC+8)
    Publisher: Elsevier;Amsterdam: Elsevier B.V
    Abstract: 摘要: ► Nanoscale alumina was fabricated on NiAl(100) surface with a STM tip. ► Varied powers (bias×current) give two distinct modes of oxidation. ► In the high-power mode alumina forms on the surface near the tip. ► In the low-power mode alumina grows along direction [001] or [010] of NiAl(100). ► The grown alumina strips have minimal width about 3nm. Nanoscale alumina was fabricated on NiAl (100) surface using a scanning tunneling microscope in an ultrathin vacuum condition. With the tunneling current greater than 0.4nA and the power (bias voltage×tunneling current) greater than 0.24nW, Al and pre-adsorbed O atoms were activated to form alumina (with thickness 0.25–1.0nm) on the surface directly vicinal to the tip; the width and thickness of the grown alumina strips are controllable by the current and bias. With an evidently smaller power and a smaller bias (≦1.0V), crystalline alumina were grown along direction [001] or [010] of NiAl(100) in the tip-scanned area of either O-chemisorbed or oxidized surfaces, independent of the direction of tip movement. The alumina strips grown through the latter mode have minimal width near 3nm.
    出版者: Amsterdam: Elsevier B.V
    出版日期: 2013-01-01
    出處: Applied surface science, 2013-01, Vol.264, p.280-285
    版權: 2012 Elsevier B.V.
    版權: 2014 INIST-CNRS
    識別號: ISSN: 0169-4332
    識別號: EISSN: 1873-5584
    識別號: DOI: 10.1016/j.apsusc.2012.10.013
    Appears in Collections:[Department of Physics] journal & Dissertation

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