A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

NCUIR > Engineering College > Energy of Mechatronics > journal & Dissertation > Item 987654321/104709

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104709

Title:	A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering
Authors:	蘇清源;Ho, Kuan-I;Boutchich, Mohamed;Su, Ching-Yuan;Moreddu, Rosalia;Marianathan, Eugene Sebastian Raj;Montes, Laurent;Lai, Chao-Sung
Contributors:	工學院能源工程研究所
Keywords:	Channels;Charge;Decoupling;Field effect transistors;fluorographene;Graphene;Oxides;Physics;Scattering;self-aligned;Semiconductor devices
Date:	2015-11-01
Issue Date:	2026-04-23 11:56:10 (UTC+8)
Publisher:	Wiley-Blackwell;Germany: Blackwell Publishing Ltd
Abstract:	摘要： The conduction channel of a graphene field‐effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self‐aligned gate‐terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold. 其他題名： Adv. Mater 出版者： Germany: Blackwell Publishing Ltd 出版日期： 2015-11-01 出處： Advanced materials (Weinheim), 2015-11, Vol.27 (41), p.6519-6525 資源來源： Wiley Online Library Journals 版權： 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 版權： 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 版權： licence_http://creativecommons.org/publicdomain/zero 識別號： ISSN: 0935-9648 識別號： ISSN: 1521-4095 識別號： EISSN: 1521-4095 識別號： DOI: 10.1002/adma.201502544 識別號： PMID: 26398725
Appears in Collections:	[Energy of Mechatronics] journal & Dissertation

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