American Institute of Physics;Melville: AIP Publishing
摘要:
摘要： The capability to fabricate Ge/Si quantum dots with small dot size and high dot density uniformly over a large area is crucial for many applications. In this work, we demonstrate that this can be achieved by scanning a pre-deposited Ge thin layer on Si substrate with a line-focused pulsed laser beam to induce formation of quantum dots. With suitable setting, Ge/Si quantum dots with a mean height of 2.9 nm, a mean diameter of 25 nm, and a dot density of 6×1010 cm−2 could be formed over an area larger than 4 mm2. The average size of the laser-induced quantum dots is smaller while their density is higher than that of quantum dots grown by using Stranski-Krastanov growth mode. Based on the dependence of the characteristics of quantum dots on the laser parameters, a model consisting of laser-induced strain, surface diffusion, and Ostwald ripening is proposed for the mechanism underlying the formation of the Ge/Si quantum dots. The technique demonstrated could be applicable to other materials besides Ge/Si. 出版者： Melville: AIP Publishing 出版日期： 2016-05-01 出處： AIP Advances, 2016-05, Vol.6 (5), p.055323-055323-11 資源來源： DOAJ Directory of Open Access Journals 版權： Author(s) 版權： 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). 識別號： ISSN: 2158-3226 識別號： EISSN: 2158-3226 識別號： DOI: 10.1063/1.4953057 識別號： CODEN: AAIDBI
