Fluorinated graphene as high performance dielectric materials and the applications for graphene nanoelectronics

NCUIR > Engineering College > Energy of Mechatronics > journal & Dissertation > Item 987654321/104839

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104839

Title:	Fluorinated graphene as high performance dielectric materials and the applications for graphene nanoelectronics
Authors:	蘇清源;Ho, Kuan-I;Huang, Chi-Hsien;Liao, Jia-Hong;Zhang, Wenjing;Li, Lain-Jong;Lai, Chao-Sung;Su, Ching-Yuan
Contributors:	工學院能源工程研究所
Keywords:	140/133;639/301/1005/1007;639/301/357/918/1052;Dielectric constant;Dielectric properties;Electric fields;Electrical properties;Electronic equipment;Humanities and Social Sciences;Integration;multidisciplinary;Science;Temperature effects;Thermal stability;Transistors
Date:	2014-07-31
Issue Date:	2026-04-23 11:59:29 (UTC+8)
Publisher:	Nature Publishing Group;London: Springer Science and Business Media LLC
Abstract:	摘要： There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. For the first time, the dielectric properties of fluorographene, including its dielectric constant, frequency dispersion, breakdown electric field and thermal stability, were comprehensively investigated. We found that fluorographene with extremely thin thickness (5 nm) can sustain high resistance at temperature up to 400°C. The measured breakdown electric field is higher than 10 MV cm −1 , which is the heightest value for dielectric materials in this thickness. Moreover, a proof-of-concept methodology, one-step fluorination of 10-layered graphene, is readily to obtain the fluorographene/graphene heterostructures, where the top-gated transistor based on this structure exhibits an average carrier mobility above 760 cm 2 /Vs, higher than that obtained when SiO 2 and GO were used as gate dielectric materials. The demonstrated fluorographene shows excellent dielectric properties with fast and scalable processing, providing a universal applications for the integration of versatile nano-electronic devices. 其他題名： Sci Rep 出版者： London: Springer Science and Business Media LLC 出版日期： 2014-07-31 出處： Scientific Reports, 2014-07, Vol.4 (1), p.5893-, Article 5893 資源來源： Publicly available content database 版權： The Author(s) 2014 版權： Copyright Nature Publishing Group Jul 2014 版權： Copyright © 2014, Macmillan Publishers Limited. All rights reserved 2014 Macmillan Publishers Limited. All rights reserved 識別號： ISSN: 2045-2322 識別號： EISSN: 2045-2322 識別號： DOI: 10.1038/srep05893 識別號： PMID: 25081226
Appears in Collections:	[Energy of Mechatronics] journal & Dissertation

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