摘要： •IGZO TFT with GeO2/TiO2/GeO2 dielectric has been fabricated on PC substrate at room temperature.•RT Flexible TFT exhibits small gate swing of 0.132V/decade and good Ion/Ioff ratio of 2.4×107.•Such good performance was attributed to combined effect of higher-κ TiO2 and large band gap GeO2. This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132V/decade, an acceptable field effect mobility of 8cm2/(Vs), and a robust Ion/Ioff ratio of 2.4×107. The improved device performance can be attributed to the combined effect of high-κ TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature. 出版者： Kidlington: Elsevier Ltd 出版日期： 2013-11-01 出處： Solid-State Electronics, 2013-11, Vol.89, p.194-197 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2013 Elsevier Ltd 版權： 2014 INIST-CNRS 識別號： ISSN: 0038-1101 識別號： EISSN: 1879-2405 識別號： DOI: 10.1016/j.sse.2013.08.009
