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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104859


    Title: Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations
    Authors: 蘇清源;Lee, Yi-Hsien;Liu, Keng-Ku;Lu, Ang-Yu;Wu, Chih-Yu;Lin, Cheng-Te;Zhang, Wenjing;Su, Ching-Yuan;Hsu, Chang-Lung;Lin, Tsung-Wu;Wei, Kung-Hwu;Shi, Yumeng;Li, Lain-Jong
    Contributors: 工學院能源工程研究所
    Keywords: ammonia;Atomic force microscopy;boron nitride;Chemical vapor deposition;Crystal structure;crystals;Electron back scatter diffraction;Foils;Nickel;Nitrides;Raman imaging;Ultrahigh vacuum;vapors;X-ray diffraction
    Date: 2012-01-07
    Issue Date: 2026-04-23 11:59:59 (UTC+8)
    Publisher: Royal Society of Chemistry
    Abstract: 摘要: Layered hexagonal-boron nitride (h-BN) films were synthesized by chemical vapor deposition (CVD) on Ni foils using ammonia borane as a precursor. Confocal Raman spectroscopy and electron backscatter diffraction (EBSD) were used to probe the effect of underlying Ni crystals with various orientations on growth behaviors of h-BN layers. The growth of the h-BN layers strongly depends on the Ni crystal orientations, where the growth rate of h-BN is larger on Ni(100)-like crystal surfaces but the growth on Ni(111)-like surfaces is not detectable, suggesting that Ni (100)-like facets are likely to promote the growth of h-BN compared with Ni (111)-like surfaces. The observation is in clear contrast to the reported growth of h-BN on Ni(111) in an ultrahigh vacuum environment. The as-grown CVD h-BN films on Ni exhibit a layered structure as revealed by atomic force microscopy (AFM). Thin h-BN layers are found on the Ni domain with a low growth rate. The observation of h-BN growth on various Ni grains may provide insights for the control of thickness, size and morphology of CVD h-BN films.
    出版日期: 2012-01-01
    出處: RSC advances, 2012-01, Vol.2 (1), p.111-115
    資源來源: Royal Society of Chemistry
    識別號: ISSN: 2046-2069
    識別號: EISSN: 2046-2069
    識別號: DOI: 10.1039/C1RA00703C
    Appears in Collections:[Energy of Mechatronics] journal & Dissertation

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