Nanopatterned silicon substrate use in heterojunction thin film solar cells made by magnetron sputtering

NCUIR > Engineering College > Energy of Mechatronics > journal & Dissertation > Item 987654321/104911

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104911

Title:	Nanopatterned silicon substrate use in heterojunction thin film solar cells made by magnetron sputtering
Authors:	詹佳樺;Chan, Chia-Hua;Wei, Hung-Sen;Lin, Chang-Rong;Tseng, Shao-Ze;Chen, Sheng-Hui
Contributors:	工學院能源工程研究所
Keywords:	Chemical vapor deposition;Heterojunctions;Monomolecular films;Nanostructure;Photovoltaic cells;Silicon;Silicon substrates;Silicon wafers;Solar batteries;Solar cells;Solar energy;Thin films;Wafers
Date:	2014-01-01
Issue Date:	2026-04-23 12:01:22 (UTC+8)
Publisher:	Hindawi Publishing Corporation;Cairo, Egypt: Hindawi Publishing Corporation
Abstract:	摘要： This paper describes a method for fabricating silicon heterojunction thin film solar cells with an ITO/p-type a-Si : H/n-type c-Si structure by radiofrequency magnetron sputtering. A short-circuit current density and efficiency of 28.80 mA/cm2 and 8.67% were achieved. Novel nanopatterned silicon wafers for use in cells are presented. Improved heterojunction cells are formed on a nanopatterned silicon substrate that is prepared with a self-assembled monolayer of SiO2 nanospheres with a diameter of 550 nm used as an etching mask. The efficiency of the nanopattern silicon substrate heterojunction cells was 31.49% greater than that of heterojunction cells on a flat silicon wafer. 出版者： Cairo, Egypt: Hindawi Publishing Corporation 出版日期： 2014-01-01 出處： International Journal of Photoenergy, 2014-01, Vol.2014 (2014), p.1-10 資源來源：華藝CEPS中文電子期刊服務版權： Copyright © 2014 Shao-Ze Tseng et al. 版權： COPYRIGHT 2014 John Wiley & Sons, Inc. 版權： COPYRIGHT 2014 Hindawi Limited 版權： Copyright © 2014 Shao-Ze Tseng et al. Shao-Ze Tseng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 識別號： ISSN: 1110-662X 識別號： ISSN: 1687-529X 識別號： EISSN: 1687-529X 識別號： DOI: 10.1155/2014/707543
Appears in Collections:	[Energy of Mechatronics] journal & Dissertation

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