One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film

NCUIR > Engineering College > Energy of Mechatronics > journal & Dissertation > Item 987654321/104920

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Title:	One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film
Authors:	蘇清源;Ho, Kuan-I;Liao, Jia-Hong;Huang, Chi-Hsien;Hsu, Chang-Lung;Zhang, Wenjing;Lu, Ang-Yu;Li, Lain-Jong;Lai, Chao-Sung;Su, Ching-Yuan
Contributors:	工學院能源工程研究所
Keywords:	CF4 plasma;Channels;fluorinated graphene;Fluorination;Graphene;Heterojunctions;Nanotechnology;Optical properties;Semiconductor devices;Semiconductors;Transistors
Date:	2014-03-12
Issue Date:	2026-04-23 12:01:33 (UTC+8)
Publisher:	Wiley-VCH Verlag;Germany: Blackwell Publishing Ltd
Abstract:	摘要： In this study, the scalable and one‐step fabrication of single atomic‐layer transistors is demonstrated by the selective fluorination of graphene using a low‐damage CF4 plasma treatment, where the generated F‐radicals preferentially fluorinated the graphene at low temperature (<200 °C) while defect formation was suppressed by screening out the effect of ion damage. The chemical structure of the C–F bonds is well correlated with their optical and electrical properties in fluorinated graphene, as determined by X‐ray photoelectron spectroscopy, Raman spectroscopy, and optical and electrical characterizations. The electrical conductivity of the resultant fluorinated graphene (F‐graphene) was demonstrated to be in the range between 1.6 kΩ/sq and 1 MΩ/sq by adjusting the stoichiometric ratio of C/F in the range between 27.4 and 5.6, respectively. Moreover, a unique heterojunction structure of semi‐metal/semiconductor/insulator can be directly formed in a single layer of graphene using a one‐step fluorination process by introducing a Au thin‐film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one‐step fluorination process, in which pristine graphene, partial F‐graphene, and highly F‐graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on‐off ratio above 10, which is 3‐fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic‐layer scale. The large‐scale fabrication of atomic‐layer transistors, each of which consist of a single graphene sheet with regions of metallic, semiconductor, and insulator character, are manufactured by a one‐step fluorination process. 其他題名： Small 出版者： Germany: Blackwell Publishing Ltd 出版日期： 2014-03-01 出處： Small (Weinheim an der Bergstrasse, Germany), 2014-03, Vol.10 (5), p.989-997 版權： 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 版權： 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 版權： Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 1613-6810 識別號： ISSN: 1613-6829 識別號： EISSN: 1613-6829 識別號： DOI: 10.1002/smll.201301366 識別號： PMID: 23956038
Appears in Collections:	[Energy of Mechatronics] journal & Dissertation

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