Photoelectrochemical performance of gallium-doped AgInS2 photoelectrodes prepared by electrodeposition process

NCUIR > Engineering College > Energy of Mechatronics > journal & Dissertation > Item 987654321/104940

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104940

Title:	Photoelectrochemical performance of gallium-doped AgInS2 photoelectrodes prepared by electrodeposition process
Authors:	曾重仁;Tseng, Chung-Jen;Wang, Chih-Hao;Cheng, Kong-Wei
Contributors:	工學院能源工程研究所
Keywords:	Chemistry;Electrochemistry;Exact sciences and technology;General and physical chemistry;Photoelectrochemistry. Electrochemiluminescence
Date:	2012-01-01
Issue Date:	2026-04-23 12:02:01 (UTC+8)
Publisher:	Elsevier BV;Amsterdam: Elsevier BV
Abstract:	出版者： Amsterdam: Elsevier BV 出版日期： 2012-01 出處： Solar Energy Materials and Solar Cells, 2012-01, Vol.96 (1), p.33-42 資源來源： ScienceDirect (Elsevier) Journals 版權： 2015 INIST-CNRS 識別號： ISSN: 0927-0248 識別號： DOI: 10.1016/j.solmat.2011.09.010
Appears in Collections:	[Energy of Mechatronics] journal & Dissertation

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