Photonic crystal cavity with double heterostructure in gan bulk

NCUIR > Engineering College > Energy of Mechatronics > journal & Dissertation > Item 987654321/104944

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/104944

Title:	Photonic crystal cavity with double heterostructure in gan bulk
Authors:	詹佳樺;Cheng, Yu-Chieh;Cai, Dong-Po;Chen, Chii-Chang;Chan, Chia-Hua;Lee, Chien-Chieh;Tsai, Ya-Lun
Contributors:	工學院能源工程研究所
Keywords:	Cavity resonators;double heterostructure;Gallium nitride;GaN;Laser excitation;Lattices;Photonic Crystals;Photonics;Q-factor
Date:	2013-09-27
Issue Date:	2026-04-23 12:02:07 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;IEEE
Abstract:	摘要： In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/ cm 2 . The Q-factor of the cavity is measured to be as high as 10 4 . 其他題名： JPHOT 出版者： IEEE 出版日期： 2013-10-01 出處： IEEE photonics journal, 2013-10, Vol.5 (5), p.2202606-2202606 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 1943-0655 識別號： ISSN: 1943-0647 識別號： EISSN: 1943-0647 識別號： DOI: 10.1109/JPHOT.2013.2280343 識別號： CODEN: PJHOC3
Appears in Collections:	[Energy of Mechatronics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	33	View/Open

社群 sharing