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| 題名: | Interfacial Interaction between HfO2 and MoS2: From Thin Films to Monolayer |
| 作者: | 森馬丁;Yang, Ming;Chai, Jian Wei;Callsen, Martin;Zhou, Jun;Yang, Tong;Song, Ting Ting;Pan, Ji Sheng;Chi, Dong Zhi;Feng, Yuan Ping;Wang, Shi Jie |
| 貢獻者: | 理學院物理學系 |
| 關鍵詞: | dielectrics;electronic equipment;endothermy;oxygen;physical chemistry |
| 日期: | 2016-05-12 |
| 上傳時間: | 2026-04-23 12:06:30 (UTC+8) |
| 出版者: | American Chemical Society |
| 摘要: | 摘要： The interfacial interaction between high-κ dielectrics and two-dimensional channel materials plays an important role in determining electronic properties of high-performance electronic devices. In this study, via first-principles calculations, we show that the interaction between oxygen-terminated HfO2 (111) and the MoS2 monolayer is weak and dominated by the van der Waals force. This weak interaction results in symmetric band offsets which are larger than 1 eV. The presence of oxygen vacancies in HfO2 enhances the interfacial interaction significantly, leading to electron–hole puddles, larger effective masses, and localized midgap states in the MoS2. In contrast, strong interaction is found at the interface of hafnium-terminated HfO2 (111) and the MoS2 monolayer, but it results in inferior electronic properties. In addition, when the thickness of MoS2 increases, the formation of an oxygen-terminated HfO2 thin film on MoS2 becomes endothermic accompanied by asymmetrically increased band offsets due to reduced band gaps of MoS2 thin films. Our results reveal surface- and thickness-dependent interfacial interaction between a high-κ dielectric and a two-dimensional material and might shed light on the integration of high-κ dielectrics into two-dimensional materials based electronic devices.
其他題名： J. Phys. Chem. C
出版者： American Chemical Society
出版日期： 2016-05-12
出處： Journal of physical chemistry. C, 2016-05, Vol.120 (18), p.9804-9810
資源來源： American Chemical Society Journals
版權： Copyright © 2016 American Chemical Society
識別號： ISSN: 1932-7447
識別號： ISSN: 1932-7455
識別號： EISSN: 1932-7455
識別號： DOI: 10.1021/acs.jpcc.6b01576 |
| 顯示於類別: | [物理學系] 期刊論文
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