On the doping limit for strain stability retention in phosphorus doped Si:C

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/105554

Title:	On the doping limit for strain stability retention in phosphorus doped Si:C
Authors:	溫偉源;Chuang, Yao-Teng;Hu, Kuan-Kan;Woon, Wei-Yen
Contributors:	理學院物理學系
Keywords:	ANNEALING;Applied physics;CARBON;CARBON COMPOUNDS;CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;DOPED MATERIALS;FOURIER TRANSFORM SPECTROMETERS;Fourier transforms;GETTERING;HALL EFFECT;ION IMPLANTATION;Phosphorus;PHOSPHORUS ADDITIONS;PRECIPITATION;RELAXATION;RESOLUTION;SILICON;SILICON CARBIDES;SILICON COMPOUNDS;STABILITY;Strain relaxation;STRAINS;X ray spectra;X-RAY DIFFRACTION
Date:	2014-07-21
Issue Date:	2026-04-23 12:36:04 (UTC+8)
Publisher:	Melville: American Institute of Physics
Abstract:	摘要： Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below β-SiC precipitation threshold temperature, especially for the highest phosphorus doped case. Most of the substitutional carbon is retained and no further β-SiC formation can be found for all samples investigated. Volume compensation through gettering of interstitial atoms around substitutional carbon is considered as a probable mechanism for the observed strain relaxation. The strain relaxation effect can be further reduced with HF treatment prior to post-annealing process. We found an upper limit for ion implant dose (<1 × 1014 atom/cm2) for the retention of strain stability in phosphorus doped Si:C. 出版者： Melville: American Institute of Physics 出版日期： 2014-07-21 出處： Journal of applied physics, 2014-07, Vol.116 (3) 資源來源： AIP Journals (American Institute of Physics) 版權： 2014 AIP Publishing LLC. 識別號： ISSN: 0021-8979 識別號： EISSN: 1089-7550 識別號： DOI: 10.1063/1.4890303
Appears in Collections:	[Department of Physics] journal & Dissertation

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