Japan Society of Applied Physics;The Japan Society of Applied Physics
摘要:
摘要： Solid-phase-epitaxial-regrowth (SPER) dynamics of ion-implanted silicon were studied through in situ time-resolved reflectivity measurements. The roles of strain induced by dopant and isovalent impurities with different atomic sizes were disentangled by considering the actual Fermi-level shifting and effective strain induced by partial impurities, as obtained from Hall measurements and high-resolution X-ray diffraction. Contrary to in the previous model, SPER rate retardation was found in the cases of both isovalent-impurity-induced tensile and compressive strain. We propose a modified model incorporating strain into generalized Fermi-level shifting to inclusively explain the SPER dynamics. 其他題名： Appl. Phys. Express 出版者： The Japan Society of Applied Physics 出版日期： 2015-02-01 出處： Applied Physics Express, 2015-02, Vol.8 (2), p.21302 資源來源： Institute of Physics Journals 版權： 2015 The Japan Society of Applied Physics 識別號： ISSN: 1882-0778 識別號： EISSN: 1882-0786 識別號： DOI: 10.7567/APEX.8.021302 識別號： CODEN: APEPC4
