Institute of Electrical and Electronics Engineers Inc.;IEEE
摘要:
摘要： A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor (Q) is presented. The inductor is made by three top metal traces connected with bondwire loops above the CMOS chip. The proposed inductor with 2.75-nH inductance achieves a Q of 18, which is three times as much as that of a conventional CMOS standard spiral inductor at 2.4 GHz. The Q of the inductor is over 15 from 2 to 14 GHz, which can cover the frequency band of wireless sensor network and worldwide interoperability for microwave access applications. The output power and power-added efficiency of the PA with the inductor are improved by 1.5 dBm and 7% as compared with those of the fully integrated CMOS PA, respectively. 其他題名： TCPMT 出版者： IEEE 出版日期： 2013-08-01 出處： IEEE transactions on components, packaging, and manufacturing technology (2011), 2013-08, Vol.3 (8), p.1286-1292 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 2156-3950 識別號： EISSN: 2156-3985 識別號： DOI: 10.1109/TCPMT.2012.2227260 識別號： CODEN: ITCPC8
