65-nm CMOS dual-gate device for Ka-band broadband low-noise amplifier and high-accuracy quadrature voltage-controlled oscillator

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Title:	65-nm CMOS dual-gate device for Ka-band broadband low-noise amplifier and high-accuracy quadrature voltage-controlled oscillator
Authors:	張鴻埜;Chang, Hong-Yeh;Lin, Chi-Hsien;Liu, Yu-Cheng;Yeh, Yeh-Liang;Chen, K.;Wu, Szu-Hsien
Contributors:	資訊電機學院電機工程學系
Keywords:	Amplifiers;Applied sciences;Bandwidth;Circuit design;Circuit properties;CMOS;CMOS integrated circuits;Design engineering;Design. Technologies. Operation analysis. Testing;Devices;Electric, optical and optoelectronic circuits;Electronic circuits;Electronics;Exact sciences and technology;Gain;Integrated circuit modeling;Integrated circuits;Logic gates;low-noise amplifiers (LNAs);microwave and millimeter-wave (MMW) integrated circuits (ICs);Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits;Noise;Noise levels;Oscillators, resonators, synthetizers;Quadratures;RF integrated circuit (RFIC);Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Transistors;Voltage controlled oscillators;voltage-controlled oscillator (VCO)
Date:	2013-05-15
Issue Date:	2026-04-23 13:13:13 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
Abstract:	摘要： Design and analysis of a two-stage low-noise amplifier (LNA) and a bottom-series coupled quadrature voltage-controlled oscillator (QVCO) using a 65-nm CMOS dual-gate device are present in this paper. By using the proposed dual-gate device, the parasitic capacitance and the effective substrate resistance can be reduced. Moreover, the 3-dB cutoff frequency can be extended due to the reduction of the Miller effect. The bandwidth of the dual-gate LNA is investigated to compare with the conventional cascode configuration. Besides, the operation principle of the quadrature signal generation using the dual-gate device is also presented for the QVCO design. The two-stage dual-gate LNA demonstrates a flat 3-dB bandwidth of 7.3 GHz from 19.4 to 26.7 GHz and a maximum gain of 18.9 dB. At 24 GHz, the measured minimum noise figure is 4.7 dB, and the measured output third-order intercept point (OIP 3 ) is 11 dBm. The dual-gate QVCO exhibits an oscillation frequency of up to 25.3 GHz, a phase noise of -109 dBc/Hz at 1-MHz offset frequency, an amplitude error of 0.16 dB, and a phase error of 0.8 ° . The proposed dual-gate CMOS device is very suitable for the linear and nonlinear circuit designs above 20 GHz, especially for millimeter-wave applications due to its high speed and compact area. 其他題名： TMTT 出版者： New York, NY: IEEE 出版日期： 2013-06-01 出處： IEEE Transactions on Microwave Theory and Techniques, 2013-06, Vol.61 (6), p.2402-2413 資源來源： IEEE Electronic Library (IEL) 版權： 2014 INIST-CNRS 識別號： ISSN: 0018-9480 識別號： EISSN: 1557-9670 識別號： DOI: 10.1109/TMTT.2013.2259256 識別號： CODEN: IETMAB
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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