850-nm edge-illuminated Si photodiodes fabricated with CMOS-MEMS technology

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/106208

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/106208

Title:	850-nm edge-illuminated Si photodiodes fabricated with CMOS-MEMS technology
Authors:	辛裕明;Hsieh, Yu-Chen;Chou, Fang-Ping;Wang, Ching-Wen;Huang, Chih-Ai;Hsin, Yue-Ming
Contributors:	資訊電機學院電機工程學系
Keywords:	Avalanche photodiodes;Bandwidth;CMOS integrated circuits;CMOS technology;edge-illuminated photodiodes;micro-electro-mechanical systems (MEMS);photodetectors;Photodiodes;Silicon;Substrates
Date:	2013-10-07
Issue Date:	2026-04-23 13:13:19 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;IEEE
Abstract:	摘要： This letter examines edge-illuminated silicon photodiodes (PDs) fabricated using standard CMOS technology operated at 850-nm wavelength. A micro-electro-mechanical systems (MEMS) process was employed to expose the illuminated surface and achieve edge illumination. A single-mode lensed fiber is employed to inject light into the depletion region of the PD directly, limiting and reducing the diffusive carriers within the bulk Si substrate. Through employing this procedure, this letter achieved a superior performance in the 3-dB bandwidth compared with that yielded by vertically illuminated PDs. The 5.4 GHz high bandwidth was obtained using an edge-illuminated PD with a 20 \mu{\rm m}\times\, 15.6 \mu{\rm m} active region. 其他題名： LPT 出版者： IEEE 出版日期： 2013-10-15 出處： IEEE photonics technology letters, 2013-10, Vol.25 (20), p.2018-2021 資源來源： IEEE All-Society Periodicals Package (ASPP) 1998–Present 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2013.2280987 識別號： CODEN: IPTLEL
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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