Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
摘要:
摘要： This letter presents a 2.5 GHz high efficiency high power low phase noise monolithic microwave power oscillator using 0.5- μm GaAs enhancement- and depletion-mode pseudomorphic high-electron mobility transistor process. The class-E load network with finite dc-feed inductance is adopted in the power oscillators to achieve high efficiency. The shunt capacitance and load resistance of the class-E network can be larger than those of the class-E load network with the large dc-feed inductance. With a dc supply voltage of 4 V, the proposed power oscillator demonstrates a peak efficiency of 53%, a maximum output power of 24.8 dBm, and a minimum phase noise of -127 dBc/Hz at 1 MHz offset frequency. 其他題名： LMWC 出版者： New York: IEEE 出版日期： 2015-11-01 出處： IEEE microwave and wireless components letters, 2015-11, Vol.25 (11), p.730-732 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Nov 2015 識別號： ISSN: 1531-1309 識別號： ISSN: 2771-957X 識別號： EISSN: 1558-1764 識別號： EISSN: 2771-9588 識別號： DOI: 10.1109/LMWC.2015.2479849 識別號： CODEN: IMWCBJ
