Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
摘要:
摘要： This letter proposes a broadband and low-loss multiconductor-lines signal combiner in 90 nm CMOS. The signal combiner consists of one broadside-coupled balun, two broadband in-phase power dividers, one edge-coupled balun, and four impedance-transformation lines. By using thin-film microstrip lines to avoid the loss from silicon substrate, the signal combiner has a simulated insertion loss of 8.1 dB and port-to-port isolations better than 42 dB from 35 to 83 GHz. The signal combiner is then integrated into a source-pumped mixer, and a -1±1.5-dB conversion gain and a 13 dBm average input IP3 at a 6.5 mW total dc power are achieved in measurements. 其他題名： LMWC 出版者： New York, NY: IEEE 出版日期： 2013-10-01 出處： IEEE microwave and wireless components letters, 2013-10, Vol.23 (10), p.548-550 資源來源： IEEE Electronic Library (IEL) 版權： 2014 INIST-CNRS 識別號： ISSN: 1531-1309 識別號： EISSN: 1558-1764 識別號： DOI: 10.1109/LMWC.2013.2279099 識別號： CODEN: IMWCBJ
