Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
摘要:
摘要： A high-gain gate-pumped down-conversion mixer at 60 GHz is realized in a standard 90-nm CMOS process. The proposed mixer adopted a Darlington cell and a microstrip-line Lange coupler to yield wide 3-dB bandwidth from 5 to 65 GHz. The measured performance demonstrates a conversion gain (CG) of 6 dB at 4.2-mW power consumption. The maximum CG is 6.5 dB at 36 GHz. This mixer is then integrated with a three-stage low-noise amplifier, to form a 60-GHz receiver front-end. The receiver achieves a CG of 28 dB with a noise figure of 7.1 dB at 20-mW power consumption from a 1-V supply voltage. The 3-dB RF bandwidth is 14 GHz. 其他題名： TMTT 出版者： New York, NY: IEEE 出版日期： 2013-04-01 出處： IEEE transactions on microwave theory and techniques, 2013-04, Vol.61 (4), p.1516-1522 資源來源： IEEE Xplore 版權： 2014 INIST-CNRS 識別號： ISSN: 0018-9480 識別號： EISSN: 1557-9670 識別號： DOI: 10.1109/TMTT.2013.2250514 識別號： CODEN: IETMAB
