A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

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Title:	A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time
Authors:	綦振瀛;Hsin, Yue-Ming;Ke, Tsung-Yu;Lee, Geng-Yen;Chyi, Jen-Inn;Chiu, Hsien-Chin
Contributors:	資訊電機學院電機工程學系
Keywords:	AlGaN;GaN;reverse recovery time;Schottky barrier diode
Date:	2012-03-01
Issue Date:	2026-04-23 13:15:50 (UTC+8)
Publisher:	Wiley-VCH Verlag;Berlin: WILEY-VCH Verlag
Abstract:	摘要： Lateral AlGaN/GaN Schottky barrier diodes on silicon (111) substrate have been fabricated and characterized. The Hall measurement shows the mobility of 1430 cm2/V‐s with a sheet carrier density of 9.8 × 1012 cm‐2 for the AlGaN/GaN structure. The specific on‐state resistance (Ron) is 1.27 mΩ‐cm2, while the forward turn‐on voltage is 1.43 V at the current density of 100 A/cm2 for device with Schottky‐to‐ohmic distance of 10 μm. The measured reverse breakdown voltage (VB) at room temperature is up to 600 V without edge termination. The figure‐of‐merit, (VB)2/Ron, is 302.7 MWcm‐2, and fast reverse recovery time is observed for device switched from a forward current density of 720 A/cm2 to a reverse bias of 30 V with di /dt of 60 A/μs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 其他題名： Phys. Status Solidi C 出版者： Berlin: WILEY-VCH Verlag 出版日期： 2012-03 出處： Physica status solidi. C, 2012-03, Vol.9 (3-4), p.949-952 資源來源： Alma/SFX Local Collection 版權： Copyright © 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 版權： Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 1862-6351 識別號： EISSN: 1610-1642 識別號： DOI: 10.1002/pssc.201100343
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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