Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
摘要:
摘要： This paper proposes a built-in self-test (BIST) scheme with syndrome-compression ability for random access memories (RAMs) with static (SF) and dynamic faults (DFs). A March-element-based (MEB) compression scheme is proposed to reduce the volume of diagnostic data. The MEB compression scheme can efficiently compress the diagnostic data of a RAM tested by a March test for detecting SFs and DFs. Simulation results show that the compression ratio (the ratio of the number bits of the compressed diagnostic data to that of the original diagnostic data) is about 50.79% for an 8K×16-bit memory. The area overhead of the BIST with the MEB compressor is about 2.73% for an 8K×16-bit RAM using TSMC 0.18 um cell library. 其他題名： TCAD 出版者： New York: IEEE 出版日期： 2014-12-01 出處： IEEE transactions on computer-aided design of integrated circuits and systems, 2014-12, Vol.33 (12), p.2020-2024 資源來源： IEL(IEEE/IET Electronic Library ) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2014 識別號： ISSN: 0278-0070 識別號： EISSN: 1937-4151 識別號： DOI: 10.1109/TCAD.2014.2363393 識別號： CODEN: ITCSDI
