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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/106330


    Title: A full X-band power amplifier with an integrated guanella-type transformer and a predistortion linearizer in 0.18-μM CMOS
    Authors: 邱煥凱;Chung, Hua-Yen;Kuo, Chin-Wei;Chiou, Hwann-Kaeo
    Contributors: 資訊電機學院電機工程學系
    Keywords: CMOS;Compressing;Microwaves;Modulation;Power amplifiers;Reproduction;Transformers;X-band
    Date: 2013-09-01
    Issue Date: 2026-04-23 13:17:56 (UTC+8)
    Publisher: John Wiley and Sons Inc.
    Abstract: 摘要: A full X-band push-pull power amplifier (PA) with predistortion linearizer is developed in tsmc super(TM) 0.18- mu m CMOS technology. The broadband performance is achieved by using transformers including a differential Guanella-type transmission line transformer and two magnetically coupled transformers. The linearity of PA is enhanced by feedback topology and the use of predistortion linearizer. Over full X-band from 8 to 12 GHz, the saturated power and maximum power-added efficiency are higher than 21.3 dBm and 16.19%, respectively. The performances of output power at 1-dB compression point and power-added efficiency (PAE) at P sub(1dB) are significantly improved by an output power of 2.2 dBm and a PAE of 12.1%, which contributes to power back-off operation for the application of linear modulation. The chip area, including pads, is 1.05 mm super(2). [copy 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2229-2232, 2013
    出版日期: 2013-09-01
    出處: Microwave and optical technology letters, 2013-09, Vol.55 (9), p.2229-2232
    資源來源: Wiley Online Library
    識別號: ISSN: 0895-2477
    識別號: EISSN: 1098-2760
    識別號: DOI: 10.1002/mop.27804
    Appears in Collections:[Department of Electrical Engineering] journal & Dissertation

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