A low-power ternary content addressable memory with Pai-Sigma matchlines

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Title:	A low-power ternary content addressable memory with Pai-Sigma matchlines
Authors:	李進福;Yang, Shun-Hsun;Huang, Yu-Jen;Li, Jin-Fu
Contributors:	資訊電機學院電機工程學系
Keywords:	Applied sciences;Associative memory;Computer architecture;Content addressable memories (CAM);Delay;Design. Technologies. Operation analysis. Testing;Electronics;Exact sciences and technology;Integrated circuits;Integrated circuits by function (including memories and processors);Layout;Logic gates;low power;Low-power electronics;Magnetic and optical mass memories;MOSFETs;networking;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Storage and reproduction of information;ternary CAM (TCAM)
Date:	2012-01-01
Issue Date:	2026-04-23 13:18:57 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
Abstract:	摘要： This paper proposes a Pai-Sigma matchline scheme to reduce the compare (search) power of a ternary content addressable memory (TCAM). The proposed matchline does not incur the issues of charge sharing and short circuit current, which typically exist in the hybrid nand-nor matchline. Moreover, the switching activity of the search lines of a TCAM with the proposed matchlines is low. A 32×64-bit TCAM with the Pai-Sigma matchlines is implemented to demonstrate the low-power feature. Results show that the compare power of the TCAM can achieve 60% energy reduction compared with the conventional nor-type TCAM. Also, the energy consumption per bit per search of the TCAM is only 2.287 fJ/bit/search. 其他題名： TVLSI 出版者： New York, NY: IEEE 出版日期： 2012-10-01 出處： IEEE transactions on very large scale integration (VLSI) systems, 2012-10, Vol.20 (10), p.1909-1913 資源來源： IEEE Electronic Library (IEL) 版權： 2015 INIST-CNRS 識別號： ISSN: 1063-8210 識別號： EISSN: 1557-9999 識別號： DOI: 10.1109/TVLSI.2011.2163205 識別號： CODEN: IEVSE9
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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