Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
摘要:
摘要： This letter describes a monolithic 3.5-to-6.5 GHz stacked power amplifier (PA) in 2 μm /0.5 μm GaAs HBT-HEMT process. The proposed PA is designed using both HBT and HEMT. Based on a common-emitter (CE) configuration of HBT with a stacked common-gate (CG) configuration of HEMT, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier due to high output stacking impedance. By using the proposed method, the stacked PA demonstrates a maximum output power of 29.4 dBm, a compact chip size of 1.5 × 1 mm 2 , and a maximum power added efficiency (PAE) of 38%. The output power of the proposed PA is higher than 26.5 dBm between 3.5 and 6.5 GHz. 其他題名： LMWC 出版者： New York: IEEE 出版日期： 2012-09-01 出處： IEEE microwave and wireless components letters, 2012-09, Vol.22 (9), p.474-476 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Sep 2012 識別號： ISSN: 1531-1309 識別號： ISSN: 2771-957X 識別號： EISSN: 1558-1764 識別號： EISSN: 2771-9588 識別號： DOI: 10.1109/LMWC.2012.2210034 識別號： CODEN: IMWCBJ
