Institute of Electrical and Electronics Engineers Inc.;New York, NY: Institute of Electrical and Electronics Engineers
摘要:
摘要： This letter presents a fully monolithic Ka-band filter-based voltage-controlled oscillator (VCO) with the 0.15 mu m GaAs pseudomorphic high-electron-mobility transistor (pHEMT) as the active device. A three-pole combline bandpass filter is treated as a frequency stabilization element of the feedback oscillator to achieve a low phase-noise performance. The developed VCO has a frequency tuning range of 37.608-38.06 GHz, and in this frequency rage the calibrated output power is from 6.324 dBm to 10.46 dBm. The phase noise measured at 37.608 GHz is - 112.31 dBc/Hz at 1 MHz offset frequency, and its corresponding figure-of-merit (FOM) is - 182.7 dBc/Hz. 出版者： New York, NY: Institute of Electrical and Electronics Engineers 出版日期： 2014-02-01 出處： IEEE microwave and wireless components letters, 2014-02, Vol.24 (2), p.111-113 資源來源： IEEE Electronic Library (IEL) Journals 版權： 2015 INIST-CNRS 識別號： ISSN: 1531-1309 識別號： EISSN: 1558-1764 識別號： DOI: 10.1109/LMWC.2013.2290224
