Electrochemical Society, Inc.;The Electrochemical Society
摘要:
摘要： This paper reports a new method to reduce threading dislocation density in GaN epilayers grown on (111) Si substrates by metal-organic chemical vapor deposition. This method utilizes an in- situ SiNx mask to produce a self-assembled double-island structure, which effectively reduces threading dislocation density from 9.6 × 109 cm−2 to 2.6 × 109 cm−2 without using any lithographic and regrowth processes. InGaN light-emitting diodes fabricated on the double-island buffer layer exhibit nearly 20% improvement on the optical output power as well as less energy localization effect, compared to those without the double-island buffer layer. The mechanisms of double-island formation as well as dislocation reduction are proposed based on transmission electron microscopy investigations. 其他題名： ECS J. Solid State Sci. Technol 出版者： The Electrochemical Society 出版日期： 2014-01 出處： ECS journal of solid state science and technology, 2014-01, Vol.3 (12), p.R229-R233 資源來源： Institute of Physics Open Access Journal Titles 版權： The Author(s) 2014. Published by ECS. 識別號： ISSN: 2162-8769 識別號： ISSN: 2162-8777 識別號： EISSN: 2162-8777 識別號： DOI: 10.1149/2.0051412jss
