Electrochemical Society, Inc.;The Electrochemical Society
摘要:
摘要： This study applied a methodology for defining the threshold voltage shift (ΔVTH) transient of AlGaN/GaN heterostructure field-effect transistors (HFETs) to observe the influence of traps in AlGaN/GaN HFETs with different buffer layers: a carbon-doped (C-doped) buffer and an Al0.05Ga0.95N back barrier layer. This methodology involves synchronous switching of gate-to-source voltage (VGS) and drain-to-source voltage (VDS). Two HFETs demonstrated similar transient behaviors but different trends by enduring various VDS stress level. For devices with a C-doped buffer layer, the amount of threshold voltage shift becomes saturated with increasing VDS stress; however, a device with an Al0.05Ga0.95N back barrier layer does not. A simulation tool was used to analyze the trap behaviors and close agreement was seen between measured and simulated. 其他題名： J. Electrochem. Soc 出版者： The Electrochemical Society 出版日期： 2015-01-01 出處： Journal of the Electrochemical Society, 2015-01, Vol.162 (8), p.H522-H526 資源來源： Institute of Physics Journals 版權： 2015 The Electrochemical Society 識別號： ISSN: 0013-4651 識別號： ISSN: 1945-7111 識別號： EISSN: 1945-7111 識別號： DOI: 10.1149/2.0471508jes
