摘要： We investigate the optical properties of InAs quantum dots (QDs) capped with a thin AlxGa1−xAsSb layer. As evidenced from power-dependent and time-resolved photoluminescence (PL) measurements, the GaAsSb-capped QDs with type-II band alignment can be changed to type-I by adding Al into the GaAsSb capping layer. The evolution of band alignment with the Al content in the AlGaAsSb capping layer has also been confirmed by theoretical calculations based on 8-band k⋅p model. The PL thermal stability and the room temperature PL efficiency are also improved by AlGaAsSb capping. We demonstrate that using the quaternary AlGaAsSb can take the advantages of GaAsSb capping layer on the InAs QDs while retaining a type-I band alignment for applications in long-wavelength light emitters. 出版日期： 2013-04-29 出處： Applied physics letters, 2013-04, Vol.102 (17) 資源來源： AIP Publishing Journals 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4803013
